InAsSb and InGaAs linear and focal plane arrays

Details InAsSb and InGaAs linear and focal plane arrays InAsSb and InGaAs linear and focal plane arrays

Jul 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4028..246m&link_type=abstract

Proc. SPIE Vol. 4028, p. 246-251, Infrared Detectors and Focal Plane Arrays VI, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

Short-wave IR and mid-IR photovoltaic detector arrays consisting of In(Ga)As and InAsSb were realized. Maximum array size is 256 X 256 elements on a 25 micron pitch. The layers were grown on 3' semi-insulating GaAs substrates by MBE thereby avoiding the need for substrate removal by wafer thinning after hybridization. A reliable and uniform detector process using improved wet-etching has been developed. The citric-acid based etch has been optimized for minimum underetch such that high fill factor is achieved even with a mesa-type process. Typical RoA products at room temperature are within a factor of 2 of the theoretical limit for bulk leakage currents. The hybridization with silicon readout circuits consisted of Si-postprocessing by electroless plating or lithographic definition of Ni/Au, indium bump electroplating on the III-V chip and flip-chip integration with individual indium bumps. The indium bump process resulted in 13 micron diameter solderbumps which allows pixel pitches below 20 micron.

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