InAs/InGaSb Type-II strained layer superlattice IR detectors

Details InAs/InGaSb Type-II strained layer superlattice IR detectors InAs/InGaSb Type-II strained layer superlattice IR detectors

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650..185n&link_type=abstract

Proc. SPIE Vol. 4650, p. 185-198, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

Computer Science

Scientific paper

InAs/InGaSb type2 strained layer superlattice (SLS) combines the advantages of III-V materials technology with the strong, broad-band absorption, and wavelength tunability of HgCdTe. In fact, the significantly reduced tunneling and Auger recombination rates in SLS compared to those in HgCdTe should enable SLS detectors to outperform HgCdTe. We report the results of our investigation of InAs/InGaSb type2 strained layer superlattices (SLS)for LWIR photovoltaic detector development. We modeled the band structure, and absorption spectrum of SLS's, and achieved good agreement with experimental data. We systematically investigated the SLS growth conditions, resulting in good uniformity, and the elimination of several defects. We designed, developed and evaluated 16x16 array of 13 micron cutoff photovoltaic detectors. Photodiodes with cutoff wavelengths of 13 and 18microns were demonstrated, which are the longest wavelengths demonstrated for this material system. Quantum efficiencies commensurate with the superlattice thickness were demonstrated and verified at AFRL. The electrical properties show excessive leakage current, most likely due to trap-assisted tunneling.

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