InAs-GaSb-AlSb quantum confined structures for IR applications

Details InAs-GaSb-AlSb quantum confined structures for IR applications InAs-GaSb-AlSb quantum confined structures for IR applications

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..124h&link_type=abstract

Proc. SPIE Vol. 2554, p. 124-136, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

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We review recent progress in the development of quantum confined structures based on the InAs-GaSb-AlSb family of semiconductors. The results of transport and quantum transport experiments are summarized to illuminate band structure features and carrier scattering mechanisms that are key to device applications. The unique band structure engineering possibilities enabled by the presence of L-valleys in the conduction band are explored, as well as, the general progress in band structure calculations and modeling of complex multi-layers. A primary emphasis is the flexibility of the InAs-GaSb-AlSb material system as the basis for a wide variety of E-O modulators, frequency doublers, infrared diode lasers, and other devices.

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