In situ x-ray study of the oxidation of a vicinal NiAl(6,7,1) surface

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We present an in situ surface x-ray diffraction study of the clean, oxidized and subsequently annealed surfaces of regularly stepped NiAl(6,7,1). Our results show that the UHV stable, clean surface is not faceted and consists of a regular array of (1,1,0) terraces and (0,1,1) steps. The topmost Al and Ni atoms on the terraces exhibit a rippled relaxation while the step atoms are relaxed towards the bulk. Preferential Al oxidation at 540 K and 6×10-6 mbar O2 leads to the formation of a 5 Å thin, disordered alumina layer and induces Al vacancies and Ni anti-sites in the Al-depleted interfacial region. The terrace-step structure of the clean surface is maintained, but strong inward relaxations of the interfacial atoms change the strain field around the steps. Massive (1,1,0) faceting with facets up to 50 times larger than the original terraces occurs after high-temperature annealing, during which the surface oxide develops a complex long-range ordering. These results can be understood by the change of interfacial strain, which removes the energy barrier for mass transport. In addition, unlike in the case of low-index (1,1,0) surfaces, we find the step-induced suppression of twin domain formation in the alumina film grown on NiAl(6,7,1). Our results show that the interplay between oxidation and strain can have dramatic effects on the morphology of vicinal surfaces.

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