Improving asymmetric printing and low margin using custom illumination for contact hole lithography

Details Improving asymmetric printing and low margin using custom illumination for contact hole lithography Improving asymmetric printing and low margin using custom illumination for contact hole lithography

Apr 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006spie.6156..374j&link_type=abstract

Design and Process Integration for Microelectronic Manufacturing IV. Edited by Wong, Alfred K. K.; Singh, Vivek K. Proceedin

Mathematics

Logic

Scientific paper

Perhaps the most challenging level to print moving beyond 65 nm node for logic devices is contact hole. Achieving dense to isolated pitches simultaneously in a single mask print requires high NA with novel low-k1 imaging techniques. In order to achieve the desired dense resolution, off axis illumination (OAI) techniques such as annular and quasar are necessary. This also requires incorporation of sub-resolution assist features for improved semidense to isolated contact margin. We have previously discussed design related issues revolving around asymmetric contact hole printing and misplacement associated with using extreme off axis illumination (OAI). While these techniques offer the appropriate dense margin needed, there are regions of severe asymmetric printing which are unsolvable using optical proximity correction (OPC). These regions are impossible to avoid unless design rule restrictions or new illumination schemes are implemented. We continue this work with discussions revolved around illumination choices for alleviating these regions without losing too much dense margin.

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