Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

Details Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures Impact of Si nanocrystals in a-SiOx<Er> in C-Band emission for applications in resonators structures

2008-06-09

arxiv.org/abs/0806.1489v1

Microwave and Optoelectronics Conference, 2007. IMOC 2007. SBMO/IEEE MTT-S International, (IEEE cat. 07TH8919C, ISBN 1-4244-06

Physics

Optics

3 pages, 4 figures

Scientific paper

10.1109/IMOC.2007.4404253

Si nanocrystals (Si-NC) in a-SiOx were created by high temperature annealing. Si-NC samples have large emission in a broadband region, 700nm to 1000nm. Annealing temperature, annealing time, substrate type, and erbium concentration is studied to allow emission at 1550 nm forsamples with erbium. Emission in the C-Band region is largely reduced by the presence of Si-NC. This reduction may be due to less efficient energy transfer processes from the nanocrystals than from the amorphous matrix to the Er3+ ions, perhaps due to the formation of more centro-symmetric Er3+ sites at the nanocrystal surfaces or to very different optimal erbium concentrations between amorphous and crystallized samples.

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