Hydrogen-Adsorption Induced Atomic Rearrangement of a Pb Monolayer on Si(111)

Details Hydrogen-Adsorption Induced Atomic Rearrangement of a Pb Monolayer on Si(111) Hydrogen-Adsorption Induced Atomic Rearrangement of a Pb Monolayer on Si(111)

Feb 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005phrvl..94d5505h&link_type=abstract

Physical Review Letters, vol. 94, Issue 4, id. 045505

Physics

3

Point Defects And Defect Clusters, Scanning Tunneling Microscopes, Structure Of Clean Surfaces, Scanning Tunneling Microscopy

Scientific paper

We have observed interesting H-atom adsorption induced atomic rearrangements of a Pb monolayer on the Si(111) with a scanning tunneling microscope. A hexagonal ringlike pattern is formed around the point defect. The interactions among nearby H-adsorbed defects can even produce interferencelike superstructures. Phase boundaries are found to either enhance or suppress the formation of the interference pattern. These phenomena are produced by an intricate interplay between electronic and atomic interactions as perturbed by the adsorbed hydrogen atoms.

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