Hot-electron noise generation in gallium-arsenide Schottky-barrier diodes

Physics

Scientific paper

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Electromagnetic Noise Measurement, Gallium Arsenides, Hot Electrons, Mixing Circuits, Noise Temperature, Schottky Diodes, Noise Generators, Noise Spectra, Reflectometers, Room Temperature, Thermal Noise

Scientific paper

Measurements were made of the noise radiated out of the coaxial ports of three diodes to determine if the excess noise radiated from unpumped mixers has an intensity that diminishes abruptly between 4-75 GHz. The three diodes included a Mott-type with an epilayer thickness of not more than 1000 A, and two Schottky diodes with epilayer thicknesses of 3500 A and 25,000 A. The diodes were tested in an ambient temperature of 295 K to elicit any hot electron effects. A monotonic decrease in the radiated noise was observed with increasing frequency. It was determined that no one physical process was responsible for all the measured noise. It was concluded that only intermediate frequency components of hot-electron noise occur, and could be avoided by short pulses of diode current through local oscillators at frequencies higher than 100 GHz.

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