Highly uniform, large-area HgCdTe layers on CdTe and CdTeSe substrates

Details Highly uniform, large-area HgCdTe layers on CdTe and CdTeSe substrates Highly uniform, large-area HgCdTe layers on CdTe and CdTeSe substrates

Aug 1988

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1988jvst....6.2800b&link_type=abstract

(USAF, U.S. Army, DARPA, and American Vacuum Society, 1987 U.S. Workshop on the Physics and Chemistry of Mercury Cadmium Telluri

Physics

5

Cadmium Selenides, Crystal Growth, Crystal Lattices, Mercury Cadmium Tellurides, Organometallic Compounds, Vapor Phase Epitaxy, Chemical Reactions, Liquid Phase Epitaxy, Solid-Solid Interfaces, X Ray Diffraction

Scientific paper

This paper reports on the growth of Hg(0.8)Cd(0.2)Te on lattice matched substrates of CdTe(0.96)Se(0.04), by organomettalic vapor phase epitaxy. Layer properties are compared with those for comparable layers grown on CdTe substrates. It is shown that the use of lattice-matched substrates results in active layers of improved structural quality, as evidenced by the results of double-crystal X-ray diffraction measurements. A compositional uniformity of better than + or - 0.005 (in the Cd composition) was obtained over 1 X 2 cm area substrates and the thickness uniformity was better than + or - 0.7 microns for 12-micron thick layers. These layers were deposited by the direct reaction of mercury, dimethylcadmium, and diisopropyltelluride, without the interdiffusion of separate layers of HgTe and CdTe. Both n- and p-type layers have been grown, by suitable adjustment of the growth process. Mobility values in excess of 60,000 sq cm/V s were obtained in n-type material (x = 0.23), with an electron concentration below 1 X 10 to the 15th/cu cm. With p-type layers, mobility values of 680 sq cm/V s were obtained, with a hole concentration of 5 X 10 to the 16th/cu cm.

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