High temperature deformation of diopside IV: predominance of {110} glide above 1000°C

Physics

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Scientific paper

Gem quality single crystals of diopside were deformed in orientations labelled [3] and [4] selected to promote either (100)[010] and/or (010)[100], and {110}[001], respectively. Transmission electron microscopy (TEM) investigations performed on samples deformed in orientation [3] show that (100)[010] was activated and [010] dislocations are in climb configurations. A number of 1/2<110> dislocations are also detected although the Schmid factors of {110}1/2<110> glide systems were very low. These dislocations also lie in climb configurations. The selected thermodynamic conditions, especially the partial pressure of oxygen, allowed a large amount of partial melting to occur leading to non-intrinsic creep data. In samples deformed in orientation [4], {110}[001] glide was activated with a limited amount of partial melting. TEM investigations show that most of the dislocations are straight, and of screw character parallel to [001]. A few 1/2<110> dislocations in climb configurations are also detected. For an applied stress σ = 147 MPa and at PO2 ~ 2.7 × 10-16 MPa the creep law for {110}[001] glide is ln ɛ˙ = 27.33 - 518/RT (ɛ˙ in s-1, R = 8.32 kJ mol-1 K-1). Comparison of all the data collected so far on high temperature creep of diopside indicate that the easiest glide systems above 1000°C are {110}1/2<110>. They are followed in activity by {110}[001], then by (100)[001]. Other potential systems appear to be appreciably stronger and should remain marginal in natural deformation of diopside and similar C2/c clinopyroxenes. Climb of 1/2<110> dislocations might become relevant at temperature above 1200°C.

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