High-speed pn-CCDs as imaging detectors from 200 to 1200 nm

Details High-speed pn-CCDs as imaging detectors from 200 to 1200 nm High-speed pn-CCDs as imaging detectors from 200 to 1200 nm

Aug 2000

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2000spie.4008..368s&link_type=abstract

Proc. SPIE Vol. 4008, p. 368-374, Optical and IR Telescope Instrumentation and Detectors, Masanori Iye; Alan F. Moorwood; Eds.

Physics

Instrumentation and Detectors

Scientific paper

Fully depleted silicon pn-CCDs with an active thickness of 300 micrometers exhibit a quantum efficiency of 90 percent at a wavelength of 1 micrometers in the near IR. The multi-parallel readout architecture allows for a frame time shorter than 2 ms for a device having a format of 256 by 256 pixel. It can be operated in a full frame mode and in a frame store mode. The pixel size is 50 micrometers by 50 micrometers . The active area is then 12.8 by 12.8 mm2. Cooled down to -90 degrees C the electronic noise floor is below 5 electrons at 50 Megapixel per second. Quantum efficiency measurements will be shown as well as the physical models of the radiation entrance window. A camera system with comparable specifications - except for the pixel size - was already fabricated for ESA's XMM-NEWTON satellite mission, which was launched in early December 1999. The active size of the detector is 60 by 60 mm2 with a readout time of 4 ms. Future work includes the extension of the active area to 1000 by 1000 pixel, monolithically fabricated on a high resistivity 6 inch silicon wafer. The main driver for this development is ESA's planned XEUS mission, to be launched at the end of the next decade.

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