Physics
Scientific paper
Apr 1984
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1984apphl..44..779g&link_type=abstract
Applied Physics Letters (ISSN 0003-6951), vol. 44, April 15, 1984, p. 779-781. Research supported by the General Electric Co.
Physics
18
Carrier Density (Solid State), Carrier Mobility, Epitaxy, Hall Effect, Mercury Cadmium Tellurides, Pyrolysis, Vapor Deposition, Fabrication, Organometallic Compounds, Quality Control, Temperature Dependence
Scientific paper
An organometallic process for the epitaxial growth of Hg(1-x)Cd(x)Te is described in this letter. This process involves the simultaneous pyrolysis of dimethylcadmium and diethyltelluride in mercury vapor at 415 C, using hydrogen as the carrier gas. It is shown this process results in device quality layers of uniform composition. Layers with x = 0.17 exhibited n-type conduction, with an approximate carrier concentration of 3.8 times 10 to the 15th/cu cm, and a Hall mobility of 245,000 sq cm/Vs at 77 K. Thus, they are comparable to the best grown by liquid phase epitaxy. A p-type layer, with anomalous electrical characteristics, has also been described in this letter. Reasons for these anomalous characteristics are outlined briefly.
Bhat I.
Ghandhi Sorab K.
No associations
LandOfFree
High quality Hg(1-x)Cd(x)Te epitaxial layers by the organometallic process does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.
If you have personal experience with High quality Hg(1-x)Cd(x)Te epitaxial layers by the organometallic process, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High quality Hg(1-x)Cd(x)Te epitaxial layers by the organometallic process will most certainly appreciate the feedback.
Profile ID: LFWR-SCP-O-1498911