High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

Details High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm High-power (>1 W) dilute nitride semiconductor disk laser emitting at 1240 nm

May 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007njph....9..140k&link_type=abstract

New Journal of Physics, Volume 9, Issue 5, pp. 140 (2007).

Physics

2

Scientific paper

We report on a high-power GaInNAs/GaAs optically pumped semiconductor disk laser operating at a wavelength of 1240 nm. The laser structure consisted of 12 dilute nitride (GaInNAs) quantum wells placed on top of a GaAs/AlAs distributed Bragg reflector, the whole structure being grown by molecular beam epitaxy. A diamond heat spreader was bonded onto the sample for improved heat dissipation. When cooled down to 8°C, the laser produced continuous-wave output power up to 1.46 W in the TEM00 mode, demonstrating the potential of dilute nitrides for high-power disk laser applications.

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