High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays

Details High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays High-performance monolithic surface emitting GaAs/AlGaAs laser diode arrays

Sep 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2210..700g&link_type=abstract

Proc. SPIE Vol. 2210, p. 700-708, Space Optics 1994: Space Instrumentation and Spacecraft Optics, Thierry M. Dewandre; Joachim J

Physics

Optics

Scientific paper

This paper describes recent progress in the development of more advance laser diode pump source: 'Monolithic Surface Emitting Laser Diode' (MOSEL). In this structure, the linear bar arrays are epitaxially grown on an engraved substrate between etched deflection mirrors adjacent to the laser facets. The laser diode structure grown by MOCVD technique is a single quantum well graded index active region (SQW/GRINSCH). A specific process has been designed to have cleaved laser diode facets. Monolithic elements of 0.1 cm(superscript 2) have been designed and mounted. The quasi-CW operation gives over 100 W of optical power or a QCW power density of 1 KW/cm(superscript 2). A compact assembly of 10 similar elements gives an optical power of 1 KW QCW. CW operation have been also tested up to 150 W CW/cm(superscript 2).

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