Computer Science – Performance
Scientific paper
Apr 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..288j&link_type=abstract
Proc. SPIE Vol. 3629, p. 288-297, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.
Computer Science
Performance
Scientific paper
Results are presented for indium antimonide/indium aluminum antimonide (InSb/InAlSb) diodes grown by molecular beam epitaxy (MBE) for infrared detector applications. By lowering the substrate growth temperature during epitaxy it is possible to increase the dopant activation, both n and p-type. In addition, the Shockley-Read trap density is reduced by a factor X5 to approximately 2 X 10(superscript 13) cm(superscript -3) and the defect density in the MBE grown material falls to approximately 25 cm(superscript -2). The application of these diodes with improved performance to 2D infrared detector arrays with enhanced detectivities operating at higher temperatures will be described. Conventional 2D arrays that operate at 80 K have also been fabricated. Typical noise equivalent temperature difference (NETD) is less than 10 mK for a 1.5 msec stare time.
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