High performance 8-14 micron Pb/1-x/Sn/x/Te photodiodes

Details High performance 8-14 micron Pb/1-x/Sn/x/Te photodiodes High performance 8-14 micron Pb/1-x/Sn/x/Te photodiodes

Jan 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975ieeep..63...27k&link_type=abstract

IEEE, Proceedings, vol. 63, Jan. 1975, p. 27-32. Army-supported research.

Computer Science

Performance

7

Fabrication, Infrared Detectors, Lead Tellurides, Photodiodes, Semiconductor Devices, Tin Tellurides, Crystal Growth, Photovoltaic Effect, Semiconductor Junctions, Volt-Ampere Characteristics

Scientific paper

Photovoltaic detectors of Pb(1-x)Sn(x)Te, sensitive in the 8- to 14-micron spectral region, with near-theoretical performance characteristics, have been fabricated by a surface inversion technique. These detectors have exhibited quantum efficiencies of up to 45% (limited by surface reflection), zero-bias resistance-area products of 21 ohms-sq cm and background-limited detectivities of 1.5 x 10 to the 11th cm times (the square root of H2 divided by W). A theoretical model consistent with experimental results is presented. Such high-performance devices are useful in guidance, reconnaissance, surveillance, ranging, and communication systems.

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