Infrared detector arrays by new technologies

Mathematics – Logic

Scientific paper

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Infrared Detectors, Matrices (Circuits), Radio Frequency Heating, Semiconducting Films, Sputtering, Thin Films, Electrical Properties, Epitaxy, Fabrication, Gas Discharges, Microstructure, Polycrystals, Single Crystals, Technological Forecasting, Technology Assessment

Scientific paper

A description is given of a new technique for making thin-film infrared detectors. The new technique makes use of the synthesis of multicomponent alloys by the RF cosputtering of different elements with the aid of a multicathode system. Using this technique, it is possible to obtain n-type and p-type films of binary and ternary chalcogenide compounds, simply by controlling the quantity of excess cations or anions, respectively. Two main methods of deposition for obtaining narrow-gap semiconductor RF sputtered films have been investigated, including RF sputtering in high-purity inert argon gas to obtain especially single-crystal hetero-epitaxial growth and RF reactive sputtering in an oxygen-argon gaseous discharge mixture to obtain sensitized polycrystalline films.

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