High mobility LPE HgCdTe by postgrowth indium doping

Details High mobility LPE HgCdTe by postgrowth indium doping High mobility LPE HgCdTe by postgrowth indium doping

Sep 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989spie.1106...70k&link_type=toc

Proc. SPIE Vol. 1106, p. 70-0, Future Infrared Detector Materials, Jan W. Baars; Randolph E. Longshore; Eds.

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