High growth rate of AlN in a planetary MOVPE reactor

Details High growth rate of AlN in a planetary MOVPE reactor High growth rate of AlN in a planetary MOVPE reactor

Dec 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010tephl..36.1133l&link_type=abstract

Technical Physics Letters, Volume 36, Issue 12, pp.1133-1135

Physics

Scientific paper

AlN growth in a low-scale production AIX2000HT MOVPE system was studied.
The dependence of the growth rate on ammonia flow was shown to be of a
threshold nature originating from gas-phase parasitic reactions. An AlN
growth rate up to 8.6 μm/h under optimized reactor conditions was
demonstrated.

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