High-fill-factor monolithic infrared image sensor

Details High-fill-factor monolithic infrared image sensor High-fill-factor monolithic infrared image sensor

Dec 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1540..238k&link_type=abstract

Proc. SPIE Vol. 1540, p. 238-249, Infrared Technology XVII, Bjorn F. Andresen; Marija S. Scholl; Irving J. Spiro; Eds.

Physics

Optics

Scientific paper

A 256 X 256 element platinum silicide monolithic image sensor with a large fill factor has been developed as a high sensitivity infrared image sensor. It is essential to increase the maximum signal charge of the staring infrared image sensor to obtain higher sensitivity. We used the Charge Sweep Device readout architecture and improved operations of the floating diffusion amplifier to increase the maximum signal charge. A 52 X 40 micrometers (superscript 2) pixel using a minimum features size of 2 micrometers has a fill factor of 66%. Evaluating the performance of the device, we confirmed the effectiveness of the improved technologies. The measured saturation level is 2.8 X 10(superscript 6) electrons which is determined by the storage capacity of the detector. We estimated from a measurement point at low background temperature that the noise equivalent temperature difference with a f/1.2 optics is 0.036 K at 300 K background.

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