Physics
Scientific paper
Sep 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3360...42y&link_type=abstract
Proc. SPIE Vol. 3360, p. 42-51, Infrared Readout Electronics IV, Bedabrata Pain; Terrence S. Lomheim; Eds.
Physics
2
Scientific paper
Design and operation of a low noise CMOS focal pa;ne readout circuit with ultra-high charge handling capacity is presented. Designed for high-background, VLWIR detector readout, each readout unit cell use an accurate dynamic current memory for automatic subtraction of the dark pedestal in current domain enabling measurement of small signals 85 dB below the dark level. The redout circuit operates with low-power dissipation, high linearity, and is capable of handling pedestal currents up to 300 nA. Measurements indicate an effective charge handling capacity of over 5 X 10(superscript 9) charges/pixel with less than 10(superscript 5) electrons of input referred noise.
Blazejewski Edward R.
Pain Bedabrata
Peddada Pavani
Shaw Timothy
Sun Caihong
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