High dielectric constant gate oxides for metal oxide Si transistors

Details High dielectric constant gate oxides for metal oxide Si transistors High dielectric constant gate oxides for metal oxide Si transistors

Feb 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006rpph...69..327r&link_type=abstract

Reports on Progress in Physics, Volume 69, Issue 2, pp. 327-396 (2006).

Physics

269

Scientific paper

The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or 'high K' gate oxides such as hafnium oxide and hafnium silicate. These oxides had not been extensively studied like SiO2, and they were found to have inferior properties compared with SiO2, such as a tendency to crystallize and a high density of electronic defects. Intensive research was needed to develop these oxides as high quality electronic materials. This review covers both scientific and technological issues—the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure and reactions, their electronic structure, bonding, band offsets, electronic defects, charge trapping and conduction mechanisms, mobility degradation and flat band voltage shifts. The oxygen vacancy is the dominant electron trap. It is turning out that the oxides must be implemented in conjunction with metal gate electrodes, the development of which is further behind. Issues about work function control in metal gate electrodes are discussed.

Affiliated with

Also associated with

No associations

Rating

High dielectric constant gate oxides for metal oxide Si transistors does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with High dielectric constant gate oxides for metal oxide Si transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and High dielectric constant gate oxides for metal oxide Si transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-1722591