High contrast ratio InxGa1-xAs/GaAs multiple-quantum-well spatial light modulators

Details High contrast ratio InxGa1-xAs/GaAs multiple-quantum-well spatial light modulators High contrast ratio InxGa1-xAs/GaAs multiple-quantum-well spatial light modulators

Nov 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1541...38h&link_type=abstract

Proc. SPIE Vol. 1541, p. 38-47, Infrared Sensors: Detectors, Electronics, and Signal Processing, T. S. Jayadev; Ed.

Physics

1

Scientific paper

We report optical modulation results on InGaAs/GaAs coupled multiple quantum well spatial light modulators. The structures consist of an n(superscript +) GaAs buffer, an undoped 250 period coupled multiple quantum well layer, and a p(superscript +) GaAs/InAs cap. The samples are probed at room temperature using photoabsorption spectroscopy. An absorption peak is observed at 969 nm, and this shifts to 982 nm as the field is increased from 0 to 67 kV/cm, in good agreement with theory. For a single pass through the structure, this results in a contrast ratio > 8:1 at 969 nm. A second modulator exhibits a contrast ratio > 8:1 at 1.04 micrometers .

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