High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

Details High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition High breakdown voltage InSb p-channel metal-oxide-semiconductor field effect transistor prepared by photoenhanced chemical vapor deposition

Jul 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994spie.2225..215l&link_type=abstract

Proc. SPIE Vol. 2225, p. 215-226, Infrared Detectors and Focal Plane Arrays III, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

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Scientific paper

The InSb metal oxide semiconductor field effect transistor (MOSFET) with three different channel lengths 5, 15, and 30 micrometers were fabricated successfully. The SiO(subscript 2) prepared by photoenhanced chemical vapor deposition was used both as the gate insulator and the source/drain passivation layer to reduce the source/drain pn junction surface leakage current. The common sourch current voltage characteristics show a breakdown voltage exceeding 2 V indicating an excellent pn junction reverse characteristics. The capacitance-voltage and the transferred current versus gate voltage characteristics are discussed in detail to explain the geometry effect on the device performance.

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