Hg Cd Te MIS structure - Modelling and application to charge-coupled device infrared imagery

Physics

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Cadmium Tellurides, Charge Coupled Devices, Infrared Imagery, Mercury Tellurides, Mis (Semiconductors), Signal Processing, Arrays, Bandwidth, Carrier Injection, Charge Injection Devices, Charge Transfer, Display Devices, Infrared Detectors, Microstructure

Scientific paper

Attention is given to the application of a charge-coupled device (CCD) to the signal processing of an infrared detector mosaic. Monolithic devices processed on mercury-cadmium-telluride are noted. Optimization criteria specifying parameters such as spectral window, semiconductor material, operating temperature, and signal processing are developed. Infrared detection with MIS sensors is described with reference to the influence of the background flux on the relaxation time of the MIS capacitor, the figure of merit, and a comparison of broad and narrow spectral bandwidths. The architecture and read-out mode of a two-dimensional matrix is given noting differences between CCD and CID (charge injection device) configurations. A solution is presented for the design of an 8 x 8 matrix array.

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