Hardening techniques to counter cumulated dose on SEU and SEL in space environment

Details Hardening techniques to counter cumulated dose on SEU and SEL in space environment Hardening techniques to counter cumulated dose on SEU and SEL in space environment

Apr 1991

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991stin...9229613b&link_type=abstract

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Applications

Electrical Engineering, Manufacturing, Radiation Dosage, Radiation Effects, Semiconductor Devices, Single Event Upsets, Spacecraft Charging, Spacecraft Electronic Equipment, Carrier Mobility, Electron-Hole Drops, Inner Radiation Belt, Ionization, Radiation Damage, Radiation Shielding

Scientific paper

The total dose effect of space particles acting on semiconductor devices by creating charges in the silicon and the silicon dioxide and by creating displacement damage, from the beginning of charge creation to the parameter shifts, is reviewed. Detailed investigations on three phenomena are described: the Single Event Upset (SEU) caused by the heavy ions and the protons which come from the galactic rays and resulting in a transient upset of a critical node voltage; the Single Event Latchup (SEL) caused by the galactic and solar flares cosmic heavy ions and which may be destructive; the displacement damage induced by high energy trapped protons lying in the radiation belts (Van Allen), which involves the creation of permanent defaults over time which act on the mean carrier life, the carrier mobility and the resistivity, thus increasing either generation or recombination rate. These studies allow definition of techniques for the design and fabrication of circuits that are the least vulnerable to radiation. Simulation and test give guarantee that these new techniques assure the margins of the desired specification in space applications.

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