Hall Coefficient Dependence on Resistivity Down to Cryogenic Temperatures in Silicon Samples Irradiated with Neutrons and 12C-IONS

Physics – Medical Physics

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Scientific paper

Hall coefficient and resistivity were measured in silicon samples irradiated with neutron and carbon ions. The samples have resistivities of 0.01, 56, 157, 2500 and 7000 Ω cm before irradiation. They were irradiated with fast neutrons (56, 157 and 2500 Ω cm) and carbon ions (0.01 and 7000 Ω cm). The neutron irradiation fluences are in the range between 6.1 × 1011 and 1.1 × 1015 n/cm2 while for carbon irradiation the fluences are in the range between 5.4 × 1010 and 1.0 × 1013 ions/cm2. Hall coefficient and resistivity measurements were performed by means of the Van der Pauw technique in the temperature range from 300 to 11 K. The temperature scans show a progressive reduction of the saturation regime (where RH is almost constant) with increasing irradiation fluence. For the highest resistivity samples (2500 and 7000 Ω cm) a change of Hall coefficient sign is observed at the highest fluences.

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