Growth Pattern of Silicon Clusters

Details Growth Pattern of Silicon Clusters Growth Pattern of Silicon Clusters

1995-06-03

arxiv.org/abs/chem-ph/9506003v1

Physics

Chemical Physics

Modern Physics Letters B in press, 9 pages + 2 figures. PostScript version available at ftp://ramanujan.chem.nyu.edu/pub/mplb1

Scientific paper

10.1142/S0217984995000759

Tight-binding molecular dynamics simulated annealing technique is employed to search for the ground state geometries of silicon clusters containing 11-17 atoms. These studies revealed that layer formation is the dominant growth pattern in all these clusters. Fullerene-like precursor structures consisting of fused pentagon rings are also observed. The atoms in all these clusters exhibit pronounced preference for residing on the surface.

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