Physics
Scientific paper
Aug 1993
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993jemat..22..803r&link_type=abstract
Journal of Electronic Materials, Volume 22, Issue 8, pp.803-808
Physics
2
Cdznte/Gaas, Divinylmercury, Mombe
Scientific paper
Thermally precracked diethylzinc, dimethylcadmium, and diethyltelluride were used for the metalorganic molecular beam epitaxial growth of (001) ZnTe, CdTe, and CdZnTe films on GaAs substrates. Measurements of the growth rate as a function of the substrate temperature and the II/VI ratio were used to determine the growth kinetics of (001) ZnTe and CdTe. (001) CdTe,ZnTe, and CdZnTe films were deposited under near-stoichiometric growth conditions, as determined from the growth kinetics. The best heteroepitaxial films exhibited x-ray rocking curve full widths at half maximum of 200 210 arc-s. The photoluminescence spectra of the binary and ternary films at 5K were dominated by features associated with bound and free excitons. Secondary ion mass spectrometry measurements showed that the films were free of carbon and oxygen. A new mercury precursor, divinylmercury, was used for HgTe growth. Preliminary results indicated that divinylmercury is a viable mercury source for metalorganic molecular beam epitaxial growth when it is precracked.
Rajavel D.
Zinck J. J.
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