Graded index and randomly oriented core-shell silicon nanowires with broadband and wide angle antireflection for photovoltaic cell applications

Details Graded index and randomly oriented core-shell silicon nanowires with broadband and wide angle antireflection for photovoltaic cell applications Graded index and randomly oriented core-shell silicon nanowires with broadband and wide angle antireflection for photovoltaic cell applications

2011-08-04

arxiv.org/abs/1108.1088v1

AIP ADVANCES Vol.1, 032124 (2011)

Physics

Optics

Scientific paper

Antireflection with broadband and wide angle properties is important for a wide range of applications on photovoltaic cells and display. The SiOx shell layer provides a natural antireflection from air to the Si core absorption layer. In this work, we have demonstrated the random core-shell silicon nanowires with both broadband (from 400nm to 900nm) and wide angle (from normal incidence to 60\degree) antireflection characteristics within AM1.5 solar spectrum. The graded index structure from the randomly oriented core-shell (Air/SiOx/Si) nanowires may provide a potential avenue to realize a broadband and wide angle antireflection layer.

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