Gd and Sm interfaces with Hg(1-x)Cd(x)Te(110) and a general model of rare-earth/Hg(1-x)Cd(x)Te(110) interface formation

Details Gd and Sm interfaces with Hg(1-x)Cd(x)Te(110) and a general model of rare-earth/Hg(1-x)Cd(x)Te(110) interface formation Gd and Sm interfaces with Hg(1-x)Cd(x)Te(110) and a general model of rare-earth/Hg(1-x)Cd(x)Te(110) interface formation

Aug 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992jap....72.1104r&link_type=abstract

Journal of Applied Physics (ISSN 0021-8979), vol. 72, no. 3, Aug. 1, 1992, p. 1104-1112. Research supported by University of Min

Physics

1

Mercury Cadmium Tellurides, Photoelectric Emission, Rare Earth Elements, Solid-Solid Interfaces, Synchrotron Radiation, Gadolinium, Mercury Alloys, Particle Diffusion, Samarium, Single Crystals, Stoichiometry, Valence

Scientific paper

Room-temperature synchrotron radiation photoemission studies of rare-earth/Hg(1-x)Cd(x)Te(110) junctions were performed as a function of metal coverage for the rare-earth metals Sm, and Gd. These new results are compared to the previous results for Yb/Hg(1-x)Cd(x)Te junctions. At low rare-earth metal coverages, a rare-earth Te reaction which is observed in all cases removes Hg and Cd from the interface region, and the three-dimensional island growth of a rare-earth telluride layer 4.0-4.5 monolayer thick. The most abrupt interface region is observed for Gd/Hg(1-x)Cd(x)Te, in agreement with the more reactive character of this interface as compared to Yb/Hg(1-x)Cd(x)Te and Sm/Hg(1-x)Cd(x)Te. For higher rare-earth metal coverages, the formation of a metallic rare-earth rich layer is observed at the surface, which effectively traps Hg atoms diffusing across the interface through the formation of a rare-earth-Hg alloy.

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