Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors

Details Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors Gate induced g-factor control and dimensional transition for donors in multi-valley semiconductors

2009-05-19

arxiv.org/abs/0905.3200v1

Phys.Rev.B80:155301,2009

Physics

Quantum Physics

4 pages, 4 figures

Scientific paper

10.1103/PhysRevB.80.155301

The dependence of the g-factors of semiconductor donors on applied electric and magnetic fields is of immense importance in spin based quantum computation and in semiconductor spintronics. The donor g-factor Stark shift is sensitive to the orientation of the electric and magnetic fields and strongly influenced by the band-structure and spin-orbit interactions of the host. Using a multimillion atom tight-binding framework the spin-orbit Stark parameters are computed for donors in multi-valley semiconductors, silicon and germanium. Comparison with limited experimental data shows good agreement for a donor in silicon. Results for gate induced transition from 3D to 2D wave function confinement show that the corresponding g-factor shift in Si is experimentally observable.

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