GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update

Details GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update GaN, GaAlN, and AlN for use in UV detectors for astrophysics: an update

Apr 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2685..126k&link_type=abstract

Proc. SPIE Vol. 2685, p. 126-131, Photodetectors: Materials and Devices, Gail J. Brown; Manijeh Razeghi; Eds.

Computer Science

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Scientific paper

In SPIE Proceeding 2397 we demonstrated that there is a large payoff still to be gained by further improvements in the performance of solar blind UV detectors for astronomical purposes. We suggested that a particularly promising future technology is one based on the ability of investigators to produce high-quality films made of wide bandgap III-IV semiconductors. Here we report on significant progress we have made over the past year to fabricate and test single-pixel devices. The next step will be to measure and improve detective efficiency, measure the solar blindness over a larger dynamic range, and begin developing multiple-pixel designs.

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