GaN/AlGaN intersubband optoelectronic devices

Details GaN/AlGaN intersubband optoelectronic devices GaN/AlGaN intersubband optoelectronic devices

Dec 2009

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009njph...11l5023m&link_type=abstract

New Journal of Physics, Volume 11, Issue 12, pp. 125023 (2009).

Physics

14

Scientific paper

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride quantum wells (QWs). First, we discuss the specific features of ISB active region design using GaN/AlGaN materials, and show that the ISB wavelength can be tailored in a wide spectral range from near- to long infrared wavelengths by engineering the internal electric field and layer thicknesses. We then describe recent results for electro-optical waveguide modulator devices exhibiting a modulation depth as large as 14 dB at telecommunication wavelengths. Finally, we address a new concept of III-nitride QW detectors based on the quantum cascade scheme, and show that these photodetectors offer the prospect of high-speed devices at telecommunication wavelengths.

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