Gallium arsenide crystal growth from metallic solution under microgravity

Details Gallium arsenide crystal growth from metallic solution under microgravity Gallium arsenide crystal growth from metallic solution under microgravity

Aug 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995adspr..16..195k&link_type=abstract

Advances in Space Research, Volume 16, Issue 7, p. 195-198.

Physics

1

Scientific paper

Homogeneous and low-defect crystals are important to improving
semiconductor devices. This paper reports the properties of GaAs
crystals grown from a metallic solution under microgravity. Growth was
free from convection caused by surface tension and by gravity. Our
experiment was performed aboard the Second German Spacelab Mission D-2.

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