GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Details GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths GaInAsSb and InAsSbP photodetectors for mid-infrared wavelengths

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..354s&link_type=abstract

Proc. SPIE Vol. 3379, p. 354-360, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

1

Scientific paper

Recent improvements in mid-infrared photodetectors fabricated by the liquid phase epitaxial growth of GaInAsSb, InAsSbP, and AlGa(As)Sb on GaSb and InAs substrates are reported. GaInAsSb and InAsSbP p/n detector and AlGaAsSb/GaInAsSb avalanche photodiode (APD) structures have been fabricated. Results from previously reported devices were improved by the addition of high bandgap window layers for GaInAsSb detectors and a new longer-wavelength composition for InAsSbP detectors. Preliminary results indicate that these devices can have higher detectivity with lower cooling requirements than commercially available detectors in the same wavelength range. Infrared p/n junction detectors made from GaInAsSb and InAsSbP showed cut-off wavelengths of 2.3 micrometer and 3.2 micrometer respectively. Room temperature Johnson noise- limited detectivities (D*(subscript JOLI)) of 5 X 10(superscript 10) cmHz(superscript 1/2)/W for GaInAsSb detectors and 4 X 10(superscript 9) cmHz(superscript 1/2)/W for InAsSbP have been measured. Room- temperature avalanche multiplication gain was measured for AlGaAsSb/GaInAsSb avalanche photodiodes.

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