Gain bandwidth of Photon-Cooled HEB Mixer made of NbN Thin Film with MgO Buffer Layer on Si

Details Gain bandwidth of Photon-Cooled HEB Mixer made of NbN Thin Film with MgO Buffer Layer on Si Gain bandwidth of Photon-Cooled HEB Mixer made of NbN Thin Film with MgO Buffer Layer on Si

Mar 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002stt..conf..259v&link_type=abstract

Thirteenth International Symposium on Space Terahertz Technology, held 26-28 March 2002 at Harvard University, Cambridge, MA. O

Physics

5

Scientific paper

We present recently obtained values for gain bandwidth of NbN HEB mixers for different substrates and film thicknesses and for MgO buffer layer on Si at LO frequency of 0.85-1 THz. The maximal bandwidth, 5.2 GHz, was achieved for the device on MgO buffer layer on Si with a 2 nm thick NbN film. Functional devices based on NbN films of such thickness were fabricated for the first time due to an improvement of superconducting properties of NbN film deposited on MgO buffer layer on Si substrate.

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