GaAs TUNNETT Diodes and InP Gunn Devices for Efficient Second-Harmonic Power Generation Above 200 GHz

Details GaAs TUNNETT Diodes and InP Gunn Devices for Efficient Second-Harmonic Power Generation Above 200 GHz GaAs TUNNETT Diodes and InP Gunn Devices for Efficient Second-Harmonic Power Generation Above 200 GHz

Mar 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998stt..conf..587e&link_type=article

Proceedings of the Ninth International Symposium on Space Terahertz Technology, held March 17-19, 1998, at the Pasadena Hilton H

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