GaAs PIN photodetectors for 10 Gbit/s data communication

Details GaAs PIN photodetectors for 10 Gbit/s data communication GaAs PIN photodetectors for 10 Gbit/s data communication

May 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002spie.4650...23d&link_type=abstract

Proc. SPIE Vol. 4650, p. 23-27, Photodetector Materials and Devices VII, Gail J. Brown; Manijeh Razeghi; Eds.

Physics

Scientific paper

For high speed data communication, Zarlink has developed GaAs PIN detectors with three different diameters of the apertures: 40 micrometers , 55 micrometers and 70 micrometers . To minimize the capacitance we have chosen to use a mesa structure on a semi-insulating substrate. At íV2 Volt bias the capacitances are 110 fF, 160 fF and 230 fF for the 40 micrometers , 55 micrometers and 70 micrometers detectors respectively. For all diameters the series resistance is about 5 (Omega) and the responsivities are 0.6 A/W. At-V10 Volt bias, the dark current is less than 100 pA. Link experiments show open eye diagrams at 10 Gbit/s for a 70 micrometers unamplified PIN detector, both at room temperature and at 90 degree(s)C.

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