GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors

Details GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors GaAs homojunction interfacial workfunction internal photoemission far-infrared detectors

Oct 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2816...90y&link_type=abstract

Proc. SPIE Vol. 2816, p. 90-97, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, Randolph E. Longshore; J

Physics

Scientific paper

We report, for the first time, experimental FIR detector results based on p-GaAs homojunction interfacial workfunction internal photoemission (HIWIP) structures. The MBE grown samples consist of a multilayer (p(superscript +)- p(superscript -)-p(superscript +)-p(superscript -)-...) structure. The detector shows high responsivity over a wide wavelength range with a bias tunable cutoff wavelength ((lambda) (subscript c)). Changing the emitter layer (p(superscript +)) doping concentration (N(subscript e)) will result in different (lambda) (subscript c)s. For a detector with N(subscript e) equals 3 multiplied by 10(superscript 18) cm(superscript -3), an effective quantum efficiency of 9.2% (at 26.3 micrometer) with (lambda) (subscript c) equals 100 micrometer is obtained. Various experimental results are discussed.

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