GaAs CCD readout for engineered bandgap detectors

Details GaAs CCD readout for engineered bandgap detectors GaAs CCD readout for engineered bandgap detectors

Sep 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308..254s&link_type=abstract

IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel

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Applications

Charge Coupled Devices, Energy Gaps (Solid State), Gallium Arsenides, Band Structure Of Solids, Focal Plane Devices, Infrared Detectors, Linear Arrays

Scientific paper

GaAs and related heterostructure charge-coupled devices (CCDs) for detector array readout multiplexer applications are described. Features of resistive-gate CCDs are compared with capacitive-gate CCDs for this application. Design examples of GaAs CCD readouts for linear and two-dimensional detector arrays with different detection methods and signal coupling schemes are described. Recent progress in two-dimensional electron gas (2DEG) Al(0.3)Ga(0.7)As/GaAs resistive-gate CCDs is also presented. The 2DEG resistive-gate CCD conventional buried-channel GaAs CCD.

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