GaAs/AlGaAs multiquantum well IR detectors

Details GaAs/AlGaAs multiquantum well IR detectors GaAs/AlGaAs multiquantum well IR detectors

Nov 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1341...46k&link_type=abstract

IN: Infrared technology XVI; Proceedings of the Meeting, San Diego, CA, July 11-13, 1990 (A92-21426 07-35). Bellingham, WA, Soci

Physics

Aluminum Gallium Arsenides, Gallium Arsenides, Infrared Detectors, Quantum Wells, Cryogenic Temperature, Infrared Absorption, Spectral Sensitivity, Thermal Stability

Scientific paper

GaAs/Al(0.31)Ga(0.69)As IR detector of multiquantum well structure with a single bound state in a GaAs well have been fabricated. The peak wavelength of spectral responsivity at 77 K was 8.3 microns. The measured responsivities were 20 V/W for A-type detectors, 65 V/W for B-type detectors, and 130 V/W for C-type detectors. The corresponding specific detectivities at peak wavelength were 2.8 x 10 exp 9 cm sq rt Hz/W, 2.7 x 10 exp 9 cm sq rt Hz/W, and 2.7 x 10 exp 9 cm sq rt Hz/W, respectively. These values are about one order lower than those of conventional CdHgTe photoconductive devices.

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