Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy

Details Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy Ga-rich GaAs(001) surfaces observed during high-temperature annealing by scanning tunneling microscopy

2002-01-29

arxiv.org/abs/physics/0201060v2

Physics

Atomic and Molecular Clusters

11 pages, 3 figures

Scientific paper

Ga-rich GaAs (001) surfaces are successfully observed during high-temperature annealing by scanning tunneling microscopy (STM). With a substrate temperature of 550 C, reflection high-energy diffraction patterns and reflectance anisotropy spectra confirm a (4x2) Ga-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that detaching and attaching of Ga adatoms may be the cause of these surface dynamics. For these conditions it is determined that zeta(4x4), zeta2(4x4) and zeta(4x6) reconstructions co-exist on the surface. The zeta2(4x4) reconstruction contains a Ga tetramer cluster and in more Ga-rich conditions, the zeta2(4x6) surface has a Ga octamer cluster.

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