Forward-tunneling current voltage characteristics of HgCdTe p-on-n photodiodes

Details Forward-tunneling current voltage characteristics of HgCdTe p-on-n photodiodes Forward-tunneling current voltage characteristics of HgCdTe p-on-n photodiodes

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..601l&link_type=abstract

Proc. SPIE Vol. 3379, p. 601-607, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.

Physics

Scientific paper

Current-voltage characteristics of narrow-gap HgCdTe p-on-n photodiodes at different temperatures have been investigated. Forward tunneling current is seen in a certain forward bias region. A constant-current mode was also used to identify the trap-assistant tunneling, and the results show this forward tunneling current influences the zero bias resistance. Ideality factors, calculated from current-voltage experimental data, show a peak in the intermediate forward bias region. The height of peak in ideality factor decreases as the temperature increases. This peak is thought due to the multi-step tunneling current.

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