First time calculation of the depletion region width and barrier capacitance of practical diffused semiconductor junctions

Physics – Mathematical Physics

Scientific paper

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8 pages, 1 figure

Scientific paper

Based on semiconductor materials fundamental equations, the calculation of
the depletion region width and barrier capacitance of practical diffused
-Gaussian profile- semiconductor junctions was achieved for the first time in
this work. The obtained formulas are valid for p-n junctions, Schottky
junctions, hetero-junctions and other types of semiconductor junctions.

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