Physics
Scientific paper
Jun 1996
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2746..268k&link_type=abstract
Proc. SPIE Vol. 2746, p. 268-276, Infrared Detectors and Focal Plane Arrays IV, Eustace L. Dereniak; Robert E. Sampson; Eds.
Physics
1
Scientific paper
Properties of n-epilayer InAs-SiO(subscript 2) interface with various chemical treatments of InAs surface have been studied. Epilayer InAs films (N(subscript d) equals 10(superscript 15) cm(superscript -3)) of 5 - 7 micron thickness has been grown on n(superscript +)-substrate with doping level 3.10(superscript 18) cm(superscript -3). High quality properties of MIS-structures have been observed: surface state density < 10(superscript 11) cm(superscript -2) eV(superscript -1), flat band voltage 2 - 5 V for SiO(subscript 2) 120 nm thickness. The array of photosensitive 128 X 128 MIS-structures with In(subscript 2)O(subscript 3) gate has been mounted on silicon readout multiplexer by flip-chip method. The detectivity of InAs-cells in range of temperatures 80 - 100 K is more than 2(DOT)10(superscript 12) cmHz(superscript 1/2)W(superscript -1).
Bazovkin V. M.
Bekhterev A. V.
Kogan L. S.
Kovchavtzev A. P.
Kurishev Georgue L.
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