Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

Details Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy Fabricating interlocking support walls, with an adjustable backshort, in a TES bolometer array for far-infrared astronomy

Apr 2006

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2006nimpa.559..548m&link_type=abstract

Nuclear Instruments and Methods in Physics Research Section A, Volume 559, Issue 2, p. 548-550.

Physics

2

Lithography, Masks And Pattern Transfer, Micro- And Nano-Electromechanical Systems And Devices, Bolometers, Infrared, Submillimeter Wave, Microwave, And Radiowave Receivers And Detectors, Superconducting Infrared, Submillimeter And Millimeter Wave Detectors

Scientific paper

We report a fabrication process for deep etching silicon to different depths with a single masking layer, using standard masking and exposure techniques. Using this technique, we have incorporated a deep notch in the support walls of a transition-edge-sensor (TES) bolometer array during the detector back-etch, while simultaneously creating a cavity behind the detector. The notches serve to receive the support beams of a separate component, the Backshort-Under-Grid (BUG), an array of adjustable height quarter-wave backshorts that fill the cavities behind each pixel in the detector array. The backshort spacing, set prior to securing to the detector array, can be controlled from 25 to 300 μm by adjusting only a few process steps. In addition to backshort spacing, the interlocking beams and notches provide positioning and structural support for the ˜1 mm pitch, 8×8 array. This process is being incorporated into developing a TES bolometer array with an adjustable backshort for use in far-infrared astronomy. The masking technique and machining process used to fabricate the interlocking walls will be discussed.

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