Experimental Investigation of High-Energy Neutron Effect on Indium Antimonide Semiconductor Microcrystals Directly during Their Irradiation in Reactor Channel

Details Experimental Investigation of High-Energy Neutron Effect on Indium Antimonide Semiconductor Microcrystals Directly during Their Irradiation in Reactor Channel Experimental Investigation of High-Energy Neutron Effect on Indium Antimonide Semiconductor Microcrystals Directly during Their Irradiation in Reactor Channel

Jul 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004apsp.conf..546b&link_type=abstract

ASTROPARTICLE, PARTICLE AND SPACE PHYSICS, DETECTORS AND MEDICAL PHYSICS APPLICATIONS. Proceedings of the 8th Conference. Held 6

Physics

Medical Physics

Scientific paper

For the first time, an experiment has been performed on the direct measurement of the characteristics of indium antimonide semiconductor doped microcrystal during their irradiation by high-energy reactor neutrons at IBR-2 facility at the Neutron Physics Laboratory of JINR in Dubna, up to a high fluence of 3.6·1016 n·cm-2. Under the given irradiation conditions, two competitive processes are present: nuclear doping of InSb microcrystals with stannum and material compensation achieved by insertion of acceptor radiation defects. The material compensation efficiency increases with increasing initial charge carrier concentration. At some initial carrier concentration value, these two processes balance each other making feasible the production of radiation resistant semiconductor material for sensor electronics. The InSb microcrystals have the highest radiation harness for a carrier concentration of n = 6.7·1017 cm-3. This concentration can be recommended for producing radiation hard sensors.

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