Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer

Details Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer Exciton/plasmon polaritons in GaAs/GaAlAs heterostructures near a metallic layer

2008-09-24

arxiv.org/abs/0809.4206v1

Physics

Optics

5 pages, 5 figures

Scientific paper

10.1103/PhysRevB.78.205326

We report on the strong coupling between inorganic quantum well excitons and surface plasmons. For that purpose a corrugated silver film was deposited on the top of a heterostructure consisting of GaAs/GaAlAs quantum wells. The formation of plasmon/heavy-hole exciton/light-hole exciton mixed states is demonstrated with reflectometry experiments. The interaction energies amount to 21 meV for the plasmon/light-hole exciton and 22 meV for the plasmon/heavy-hole exciton. Some particularities of the plasmon-exciton coupling were also discussed and qualitatively related to the plasmon polarization.

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