Evidence for a hydrogen-related defect in implanted p-type 4H-SiC

Details Evidence for a hydrogen-related defect in implanted p-type 4H-SiC Evidence for a hydrogen-related defect in implanted p-type 4H-SiC

Jul 2008

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2008njph...10g3017a&link_type=abstract

New Journal of Physics, Volume 10, Issue 7, pp. 073017 (2008).

Physics

Scientific paper

200 keV hydrogen implantation was performed in order to investigate the formation of electrically active hydrogen-related defects in Al-doped 4H-SiC epitaxial layers. Samples were annealed in the 100 1200 °C temperature range for 15 min and capacitance voltage (C V) profiling was employed to study the passivating effects of hydrogen. Eight electrically active hole traps have been found by means of deep level transient spectroscopy (DLTS) and the study of their thermal stability, as well as their depth profiles, revealed the possible formation of an electrically active hydrogen-related center.

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